Growth of RhGa on GaAs (001) in a molecular beam epitaxy system
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99237
Reference10 articles.
1. Ohmic contacts to III–V compound semiconductors: A review of fabrication techniques
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4. AuGa2 on GaSb(001): An epitaxial, thermodynamically stabilized metal/III–V compound semiconductor interface
5. Comparison of chemically inert and reactive metal-compound-semiconductor interfaces: AuGa2 and gold on GaSb(001)
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