Enhanced stability of Eu in GaN nanoparticles: Effects of Si co-doping-Reference-Cited by-同舟云学术

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Enhanced stability of Eu in GaN nanoparticles: Effects of Si co-doping

Published:2015-06-14 Issue:22 Volume:117 Page:224301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kaur Prabhsharan¹²,Sekhon S. S.²³,Zavada J. M.⁴,Kumar Vijay¹⁵

Affiliation:

1. Dr. Vijay Kumar Foundation, 1969 Sector 4, Gurgaon 122001, Haryana, India

2. Department of Physics, Guru Nanak Dev University, Amritsar 143005, Punjab, India

3. Department of Physics, The University of the West Indies, St. Augustine, Trinidad and Tobago

4. Department of Electrical and Computer Engineering, NYU Polytechnic School of Engineering, Brooklyn, New York 11201, USA

5. Center for Informatics, School of Natural Sciences, Shiv Nadar University, NH91, Tehsil Dadri, Gautam Buddha Nagar 201314, Uttar Pradesh, India

Funder

International Technology Center - Pacific

Council of Scientific and Industrial Research (CSIR)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4922172

Reference47 articles.

1. Light-emitting diodes made from cadmium selenide nanocrystals and a semiconducting polymer

2. Biological Applications of Rare-Earth Based Nanoparticles

3. Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices

4. Rare earth doped III-nitrides for optoelectronics

5. Erbium-doped GaN optical amplifiers operating at 1.54 μm

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A comprehensive review on theoretical concepts, types and applications of magnetic semiconductors;Materials Science and Engineering: B;2023-02

2. Research Progress on Adjusting and Controlling Luminescence Performance of GaN∶Eu 3+ Materials;Laser & Optoelectronics Progress;2020

3. Energetics, atomic structure, and magnetics of rare earth-doped GaN bulk and nanoparticles;Rare Earth and Transition Metal Doping of Semiconductor Materials;2016

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