Bismuth nanowire growth under low deposition rate and its ohmic contact free of interface damage-Reference-Cited by-同舟云学术

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Bismuth nanowire growth under low deposition rate and its ohmic contact free of interface damage

Published:2012-03 Issue:1 Volume:2 Page:012112
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Tian Ye,Fei Guo Chuan,Guo Shengming,Wang Yongsheng,Miao Junjie,Wang Qi,Liu Qian

Funder

National Science Foundation

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3679086

Reference29 articles.

1. Bismuth quantum-wire arrays fabricated by a vacuum melting and pressure injection process

2. Step-shaped bismuth nanowires with metal–semiconductor junction characteristics

3. On-Film Formation of Bi Nanowires with Extraordinary Electron Mobility

4. Finite-size effects in the electrical transport properties of single bismuth nanowires

5. Superconductivity and Quantum Oscillations in Crystalline Bi Nanowire

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lithography-Free Bismuth Metamaterials for Advanced Light Manipulation;Photonics;2023-05-22

2. Bismuth nanowires with in situ shadow deposited Josephson junctions;Applied Physics Letters;2022-08-22

3. Growth mechanism identification of sputtered single crystalline bismuth nanowire;Applied Nanoscience;2019-04-09

4. Nanobismuth: Fabrication, Optical, and Plasmonic Properties—Emerging Applications;Journal of Nanotechnology;2018-06-06

5. Formation and possible growth mechanism of bismuth nanowires on various substrates;Applied Physics A;2017-07-08

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