Lattice polarity detection of InN by circular photogalvanic effect
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3186042
Reference22 articles.
1. Unusual properties of the fundamental band gap of InN
2. Molecular beam epitaxy growth of GaN, AlN and InN
3. Band gaps of InN and group III nitride alloys
4. Effect of epitaxial temperature on N-polar InN films grown by molecular beam epitaxy
5. Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy
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