Photoluminescence of highly excited AlN: Biexcitons and exciton-exciton scattering
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3186044
Reference11 articles.
1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
2. Photoluminescence properties of AlN homoepilayers with different orientations
3. Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy
4. Growth and studies of Si-doped AlN layers
5. Threading dislocations in heteroepitaxial AlN layer grown by MOVPE on SiC (0001) substrate
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