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Muon probes of temperature-dependent charge carrier kinetics in semiconductors

  • Published:2019-09-09 Issue:11 Volume:115 Page:112101
  • ISSN:0003-6951
  • Container-title:Applied Physics Letters
  • language:en
  • Short-container-title:Appl. Phys. Lett.

Author:

Yokoyama K.1ORCID,Lord J. S.1ORCID,Mengyan P. W.23ORCID,Goeks M. R.2ORCID,Lichti R. L.3

Affiliation:

1. ISIS, STFC Rutherford Appleton Laboratory, Didcot OX11 0QX, United Kingdom

2. Department of Physics, Northern Michigan University, Marquette, Michigan 49855, USA

3. Department of Physics and Astronomy, Texas Tech University, Lubbock, Texas 79409-1051, USA

Funder

Texas Research Incentive Program

Science and Technology Facilities Council

Northern Michigan University

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference32 articles.

1. S. Irvine , in Springer Handbook of Electronic and Photonic Materials, edited by S. Kasap and P. Capper ( Springer, 2017), pp. 1097–1109.

2. Review of Silicon Carbide Power Devices and Their Applications

3. TiO2 photocatalysis: Design and applications

4. Photoexcited Muon Spin Spectroscopy: A New Method for Measuring Excess Carrier Lifetime in Bulk Silicon

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