Photoluminescence of CF4/O2reactive ion etched In0.53Ga0.47As surfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351853
Reference7 articles.
1. Surface contamination and damage from CF4 and SF6 reactive ion etching of silicon oxide on gallium arsenide
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4. Photoluminescence characterization of InP surface reactive ion etched by a gas mixture of ethane and hydrogen
5. Alloy broadening in photoluminescence spectra ofAlxGa1−xAs
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2. Effect of the low-temperature heating on formation and evolution of defects in PHEMT AlGaAs/InGaAs structures exposed by CF4 plasma;Physica B: Condensed Matter;2003-12
3. Changes in the density of nonradiative recombination centers in GaAs/AlGaAs quantum-well structures as a result of treatment in CF4 plasma;Semiconductors;2002-01
4. Passivation of growth defects in GaAs/AlGaAs multiple quantum well structures by CF4 plasma;Physica B: Condensed Matter;2001-12
5. SURFACE AND INTERFACIAL RECOMBINATION IN SEMICONDUCTORS;Handbook of Surfaces and Interfaces of Materials;2001
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