Photocurrent transient variation in aligned Si nanowire field-effect transistors embedded with Au nanoparticles-Reference-Cited by-同舟云学术

Photocurrent transient variation in aligned Si nanowire field-effect transistors embedded with Au nanoparticles

Published:2016-09-05 Issue:10 Volume:109 Page:103508
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Dong¹²,Kong Tao¹,Wang Miao¹,Xiao Miao¹,Zhang Zhaochun²,Cheng Guosheng¹

Affiliation:

1. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Suzhou Industrial Park, Jiangsu 215123, People's Republic of China

2. School of Materials Science and Engineering, Shanghai University, 99 Shangda Road, Baoshan District, Shanghai 200444, People's Republic of China

Funder

MOST, China

NSFC, China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4962535

Reference28 articles.

1. Conjugated Polymer-Based Organic Solar Cells

2. Gate-Voltage Control of Optically- Induced Charges and Memory Effects in Polymer Field-Effect Transistors

3. A photovoltaic device structure based on internal electron emission

4. Reduction of aryl halides by consecutive visible light-induced electron transfer processes

5. Solar Hydrogen Generation by a CdS-Au-TiO2 Sandwich Nanorod Array Enhanced with Au Nanoparticle as Electron Relay and Plasmonic Photosensitizer

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