Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics-Reference-Cited by-同舟云学术

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Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics

Published:2006-08-14 Issue:7 Volume:89 Page:073510
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ju Sanghyun,Lee Kangho,Janes David B.,Dwivedi Ramesh C.,Baffour-Awuah Habibah,Wilkins R.,Yoon Myung-Han,Facchetti Antonio,Mark Tobin J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2336744

Reference14 articles.

1. Total ionizing dose effects in MOS oxides and devices

2. Radiation effects and hardening of MOS technology: devices and circuits

3. Self-Aligned, Vertical-Channel, Polymer Field-Effect Transistors

4. Plastic transistors in active-matrix displays

5. Large-Scale Hierarchical Organization of Nanowires for Functional Nanosystems

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