Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy
Author:
Funder
National Science Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4798245
Reference16 articles.
1. p-Type Modulation Doped InGaN/GaN Dot-in-a-Wire White-Light-Emitting Diodes Monolithically Grown on Si(111)
2. Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon
3. High-performance, long-wave (∼10.2 μm) InGaAs/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping
4. Effect of well width on three-color quantum dots-in-a-well infrared detectors
5. Photoluminescence Properties of a Nearly Intrinsic Single InN Nanowire
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1. Formation of spherical-shaped GaN and InN quantum dots on curved SiN/Si surface;Nanotechnology;2018-06-01
2. Polarized Infrared Reflectance Studies for Wurtzite In0.10Ga0.90N Epilayer on Sapphire Grown by MBE;International Journal of Electrochemical Science;2014-06
3. Estimation of built-in voltage from steady-state current–voltage characteristics of organic diodes;Organic Electronics;2013-08
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