Ultralow interface recombination velocity in ordered–disordered GaInP2 double heterostructures-Reference-Cited by-同舟云学术

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Ultralow interface recombination velocity in ordered–disordered GaInP2 double heterostructures

Published:1995-01-23 Issue:4 Volume:66 Page:454-456
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

van Geelen A.,Thomeer R. A. J.,Giling L. J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.114054

Reference14 articles.

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synchrotron radiation study of order in AlxGa1−xAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-05

2. Quantitative analysis of variant III CuAu-I-type ordering of AlxGa1−xAs on (110), (111)A and (001) GaAs substrates using X-ray diffraction;Journal of Crystal Growth;2006-03

3. The initial stages of growth of CuPtB ordered Ga0.52In0.48P/GaAs and Ga0.47In0.53As/InP;Applied Physics Letters;2000-02-21

4. High‐efficiency energy up‐conversion at GaAs‐GaInP2 interfaces;Applied Physics Letters;1995-11-06

5. Growth of GaInP/GaAsP short period superlattices by flow modulation organometallic vapor phase epitaxy;Journal of Electronic Materials;1995-11

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