Barrier height change in GaAs Schottky diodes induced by piezoelectric effect
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105499
Reference12 articles.
1. Optical properties of strained-layer superlattices with growth axis along [111]
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3. Strain‐induced two‐dimensional electron gas in [111] growth‐axis strained‐layer structures
4. Barrier height variation in Al/GaAs Schottky diodes with a thin silicon interfacial layer
5. Uniaxial stress dependence of current‐voltage characteristics in GaAs‐AlxGa1−xAs‐GaAs heterojunction barriers
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