Annealing effects on hydrogenated diamond NOR logic circuits-Reference-Cited by-同舟云学术

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Annealing effects on hydrogenated diamond NOR logic circuits

Published:2018-04-09 Issue:15 Volume:112 Page:153501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu J. W.¹,Oosato H.²,Liao M. Y.¹,Imura M.¹^ORCID,Watanabe E.²,Koide Y.³^ORCID

Affiliation:

1. Research Center for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

2. Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

3. Research Network and Facility Services Division, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5022590

Reference26 articles.

1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices

2. Hole-drift velocity in natural diamond

3. Diamond as an electronic material

4. On the substitutional nitrogen donor in diamond

5. Epitaxial Growth of Diamond and Diamond Devices

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1. Numerical investigation of diamond complementary logic integrated circuits;Diamond and Related Materials;2024-10

2. Hydrogen-Terminated Diamond MOS Capacitors, MOSFETs, and MOSFET Logic Circuits;Topics in Applied Physics;2024

3. Wide bandgap semiconductor-based integrated circuits;Chip;2023-12

4. Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al₂O₃ Deposition;IEEE Transactions on Electron Devices;2023-05

5. Single Crystalline Diamond p-Channel Cascode and Inverter;IEEE Transactions on Electron Devices;2022-11

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