Surface photovoltage measurement of light instability of amorphous silicon films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97215
Reference9 articles.
1. Analysis of light‐induced degradation in amorphous silicon alloyp‐i‐nsolar cells
2. Carrier lifetime model for the optical degradation of amorphous silicon solar cells
3. Light-induced instability of amorphous silicon photovoltaic cells
4. Dependence of photoinduced changes in photovoltaic and dark electrical properties of hydrogenated amorphous silicon diodes on changes in the film properties of hydrogenated amorphous silicon
5. Theory and experiment on the surface‐photovoltage diffusion‐length measurement as applied to amorphous silicon
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Surface photovoltage phenomena: theory, experiment, and applications;Surface Science Reports;1999-12
2. Monitoring of photodegradation and recovery of a-Si : H p-i-n solar cells by capacitance measurements;Physica Scripta;1994-06-01
3. Effect of carrier transport on surface photovoltage in thin semiconductor films;Solar Energy Materials and Solar Cells;1992-04
4. Metastable defect in amorphous silicon solar cells investigated by junction recovery technique;Journal of Non-Crystalline Solids;1991-03
5. Ambipolar diffusion length measurements in hydrogenated amorphous silicon;Applied Physics Letters;1989-06-12
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