Neuromorphic thermal-electric circuits based on phase-change VO2 thin-film memristor elements
Author:
Affiliation:
1. Faculty of Information Technology and Electrical Engineering, University of Oulu, P.O. Box 4500, FI-90014 Oulu, Finland
2. Department of Electron Devices, Budapest University of Technology and Economics, Budapest 1521, Hungary
Funder
National Research, Development and Innovation Office
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5037990
Reference20 articles.
1. Thermal-electronic logic circuits: Scaling down
2. Terahertz-field-induced insulator-to-metal transition in vanadium dioxide metamaterial
3. Modeling of thermal coupling in VO 2 -based oscillatory neural networks
4. Active thermal-electronic devices based on heat-sensitive metal-insulator-transition resistor elements
5. Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing
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