Application of nonalloyed PdGe ohmic contact to self-aligned gate AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124040
Reference12 articles.
1. High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well Power High-Electron-Mobility Transistors for 2.4 V Medium-Power Wireless Communication Applications
2. Highly efficient double-doped heterojunction FET's for battery-operated portable power applications
3. Thermal degradation mechanism of Ti/Pt/Au Schottky contact to n-type GaAs
4. Nonalloyed ohmic contacts ton‐GaAs by solid‐phase epitaxy of Ge
5. The temperature dependence of contact resistivity of the Ge/Pd and the Si/Pd nonalloyed contact scheme onn‐GaAs
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1. Semiconductor quantum materials and their applications in electronics and optoelectronics;Handbook of Advanced Electronic and Photonic Materials and Devices;2001
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