Influence of the hole population on the transient reflectivity signal of annealed low-temperature-grown GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1463209
Reference16 articles.
1. Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications
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4. Dependence of the carrier lifetime on acceptor concentration in GaAs grown at low-temperature under different growth and annealing conditions
5. Ultrafast Properties and Applications of GaAs and InP Based Materials Grown by MBE at Low Temperatures
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