Growth of crystalline γ‐Al2O3 on Si by molecular beam epitaxy: Influence of the substrate orientation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2753684
Reference21 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Epitaxial growth of praseodymium oxide on silicon
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5. Structural properties of epitaxial SrTiO3 thin films grown by molecular beam epitaxy on Si(001)
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