Application of the thermionic field emission model in the study of a Schottky barrier of Ni on p-GaN from current–voltage measurements
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1890476
Reference28 articles.
1. Gain mechanism in GaN Schottky ultraviolet detectors
2. Schottky barrier photodetector based on Mg‐dopedp‐type GaN films
3. Metal semiconductor field effect transistor based on single crystal GaN
4. Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivity
5. Schottky‐based band lineups for refractory semiconductors
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