1.3 μm decoupled confinement heterostructure lasers grown by chemical beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108858
Reference6 articles.
1. Measurement of the carrier dependence of differential gain, refractive index, and linewidth enhancement factor in strained‐layer quantum well lasers
2. Optical gain and loss processes in GaInAs/InP MQW laser structures
3. Dependence of polarization, gain, linewidth enhancement factor, and K factor on the sign of the strain of InGaAs/InP strained‐layer multiquantum well lasers
4. Strained multiple quantum well lasers emitting at 1.3 μm grown by low‐pressure metalorganic vapor phase epitaxy
5. 1.3 μm InGaAsP/InP multiquantum well buried heterostructure lasers grown by chemical‐beam epitaxy
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low-Threshold $\bf 1.3\,\mbi{\mu}m$ Wavelength, Strained-Layer InGaAsP Multi-Quantum Well Lasers Grown by All Solid Source Molecular Beam Epitaxy;Japanese Journal of Applied Physics;1996-05-15
2. Chemical beam epitaxy of 1.55-um separate confinement heterostructure multiple quantum well laser diodes;Optical Engineering;1995-07-01
3. All solid source molecular beam epitaxy growth of 1.35 µm wavelength strained-layer GaInAsP quantum well laser;Electronics Letters;1995-05-11
4. Photoluminescence study of excess carrier spillover in 1.3 μm wavelength strained multi‐quantum‐well InGaAsP/InP laser structures;Applied Physics Letters;1995-03-13
5. Recent progress on uncooled 1.3-μm lasers for loop applications;Optical Fiber Communications Conference;1995
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