Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3236533
Reference29 articles.
1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
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3. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
4. AlGaN/GaN-based metal–oxide–semiconductor diode-based hydrogen gas sensor
5. A gallium nitride single-photon source operating at 200 K
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