Characteristics of laser metalorganic vapor‐phase epitaxy in GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337725
Reference5 articles.
1. Laser enhanced metalorganic chemical vapor deposition crystal growth in GaAs
2. A study of the growth mechanism of epitaxial GaAs as grown by the technique of metal organic vapour phase epitaxy
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4. Thermal conductivity of silicon, germanium, III–V compounds and III–V alloys
5. Reaction of C2H4 with photo-formed O$minus; hole centers on supported MoO3
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