High-pulse-energy III-V-on-silicon-nitride mode-locked laser-Reference-Cited by-同舟云学术

High-pulse-energy III-V-on-silicon-nitride mode-locked laser

Published:2021-09-01 Issue:9 Volume:6 Page:096102
ISSN:2378-0967
Container-title:APL Photonics
language:en
Short-container-title:APL Photonics

Author:

Hermans Artur¹²^ORCID,Van Gasse Kasper¹²,Kjellman Jon Ø.³,Caër Charles³^ORCID,Nakamura Tasuku⁴,Inada Yasuhisa⁴,Hisada Kazuya⁴,Hirasawa Taku⁴,Cuyvers Stijn¹²,Kumari Sulakshna¹²,Marinins Aleksandrs³,Jansen Roelof³,Roelkens Günther¹²,Soussan Philippe³,Rottenberg Xavier³,Kuyken Bart¹²

Affiliation:

1. Photonics Research Group, Department of Information Technology, Ghent University - imec, Technologiepark-Zwijnaarde 126, 9052 Ghent, Belgium

2. Center for Nano- and Biophotonics (NB-Photonics), Ghent University, Technologiepark-Zwijnaarde 126, 9052 Ghent, Belgium

3. imec, Kapeldreef 75, 3001 Leuven, Belgium

4. Technology Division, Panasonic Corporation, 1006 Kadoma, Kadoma City, Osaka 571-8508, Japan

Publisher

AIP Publishing

Subject

Computer Networks and Communications,Atomic and Molecular Physics, and Optics

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0058022

Reference50 articles.

1. High-accuracy measurement of 240-m distance in an optical tunnel by use of a compact femtosecond laser

2. Rapid and precise absolute distance measurements at long range

3. Frequency comb spectroscopy

4. High-channel-count 20 GHz passively mode-locked quantum dot laser directly grown on Si with 41 Tbit/s transmission capacity

5. Wireless sub-THz communication system with high data rate

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