Wide (0001) terrace formation due to step bunching on a vicinal 4H-SiC (0001) epitaxial layer surface-Reference-Cited by-同舟云学术

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Wide (0001) terrace formation due to step bunching on a vicinal 4H-SiC (0001) epitaxial layer surface

Published:2017-08-21 Issue:7 Volume:122 Page:075702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tabuchi Yuki,Ashida Koji,Sonoda Masashi,Kaneko Tadaaki,Ohtani Noboru,Katsuno Masakazu,Sato Shinya,Tsuge Hiroshi,Fujimoto Tatsuo

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4999480

Reference24 articles.

1. Analysis of surface morphology at leakage current sources of 4H–SiC Schottky barrier diodes

2. Relationship between threading dislocation and leakage current in 4H-SiC diodes

3. Challenges of High-Performance and High-Reliablity in SiC MOS Structures

4. Impact of surface morphology above threading dislocations on leakage current in 4H-SiC diodes

5. Reliability of Gate Oxides on 4H-SiC Epitaxial Surface Planarized by CMP Treatment

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hydrogen Etching Process of 4H-SiC (0001) in Limited Regions;Solid State Phenomena;2024-08-22

2. Measurement of Thermal Field Temperature Distribution Inside Reaction Chamber for Epitaxial Growth of Silicon Carbide Layer;Journal of Manufacturing Science and Engineering;2024-04-22

3. Analyzing the Pattern Formation on Vicinal Surfaces in Diffusion-Limited and Kinetics-Limited Growth Regimes: The Effect of Step–Step Exclusion;Crystal Growth & Design;2023-11-15

4. Enhanced nitrogen incorporation in the 〈112̄0〉 directions on the (0001̄) facet of 4H-SiC crystals;Japanese Journal of Applied Physics;2022-08-15

5. Silicon Carbide - Graphene Nano-Gratings on 4H and 6H Semi-Insulating SiC;Materials Science Forum;2022-05-31

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