Effect of edge roughness on electronic transport in graphene nanoribbon channel metal-oxide-semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2839330
Reference11 articles.
1. Performance Projections for Ballistic Graphene Nanoribbon Field-Effect Transistors
2. Simulation of Graphene Nanoribbon Field-Effect Transistors
3. Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation
4. Scaling Behaviors of Graphene Nanoribbon FETs: A Three-Dimensional Quantum Simulation Study
5. A Graphene Field-Effect Device
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