Electrical properties of heavily Si‐doped (311)AGaAs grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112136
Reference15 articles.
1. Epitaxial structures with alternate‐atomic‐layer composition modulation
2. One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
3. Interface roughness scattering in GaAs/AlAs quantum wells
4. Interface roughness scattering in GaAs/AlAs quantum wells
5. Modification of heterojunction band offsets by thin layers at interfaces: Role of the interface dipole
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