Monte Carlo study of high-field carrier transport in 4H-SiC including band-to-band tunneling
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1530712
Reference25 articles.
1. Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
2. Study of avalanche breakdown and impact ionization in 4H silicon carbide
3. Monte Carlo calculation of hole initiated impact ionization in 4H phase SiC
4. A Full Band Monte Carlo Study of High Field Carrier Transport in 4H-SiC
5. Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
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