Retention of intermediate polarization states in ferroelectric materials enabling memories for multi-bit data storage-Reference-Cited by-同舟云学术

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Retention of intermediate polarization states in ferroelectric materials enabling memories for multi-bit data storage

Published:2016-06-06 Issue:23 Volume:108 Page:232907
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Katsouras Ilias¹,Asadi Kamal²^ORCID,Groen Wilhelm A.¹³,Blom Paul W. M.²,de Leeuw Dago M.²^ORCID

Affiliation:

1. Holst Centre, High Tech Campus 31, 5656AE Eindhoven, The Netherlands

2. Max-Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany

3. Faculty of Aerospace Engineering, Delft University of Technology, Kluyverweg 1 2629 HS, Delft, The Netherlands

Funder

Alexander von Humboldt-Stiftung (Humboldt Foundation)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4953199

Reference46 articles.

1. XCVI. Theory of barium titanate

2. Switching of Ferroelectrics Without Domains

3. Polarization Switching without Domain Formation at the Intrinsic Coercive Field in Ultrathin FerroelectricPbTiO3

4. Intrinsic Ferroelectric Coercive Field

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