Generation‐recombination‐induced nonlinear characteristics of solid‐state bipolar devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343204
Reference19 articles.
1. A new theoretical model for a p-n junction realistic diode
2. Recombination-induced non-equilibrium phase transitions in semiconductors
3. Statistics of the Recombinations of Holes and Electrons
4. Electron-Hole Recombination in Germanium
5. Auger-rekombination in Si
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1. Laser and Thermal Annealing Effects on the Optical Properties of n-GaAs [100] Crystals: Application to Its Schottky Diodes;physica status solidi (a);2000-10
2. Annealing and transient effects in some GaAs diodes;Semiconductor Science and Technology;1999-01-01
3. NUMERICAL AND EXPERIMENTAL RESULTS FOR GAAS DIODES CONFIRMING THE TWO ROOTS MODEL;Solid-State Electronics;1998-03
4. The Two Roots Model and Its Applications in GaAs-Based Devices;physica status solidi (a);1997-06
5. Static and dynamic hysteresis in deep-impurity doped n-GaAs under d.c. bias voltage;Solid-State Electronics;1996-02
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