Hot‐electron transport in GaAs in the presence of a magnetic field
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98645
Reference6 articles.
1. Hot-Electron Spectroscopy of GaAs
2. Injected-Hot-Electron Transport in GaAs
3. Hot-electron transport in heavily doped GaAs
4. Magnetic field dependence of hot‐electron transport in GaAs
5. Dynamics of injected electron cooling in GaAs
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electron interactions in the two-dimensional electron-gas base of a vertical hot-electron transistor;Physical Review B;1990-12-15
2. Hot‐electron properties of GaAs planar‐doped barrier diodes;Journal of Applied Physics;1989-11-15
3. Physics and design of hot‐electron spectrometers and transistors;Journal of Applied Physics;1989-04-15
4. A Distribution Function of Injected Electrons in the Planar Doped Barrier Transistors;ESSDERC ’89;1989
5. Use of n+ spike doping regions as nonequilibrium connectors;Electronics Letters;1988
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