Growth and structural characterization of embedded InAsSb on GaAs‐coated patterned silicon by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104480
Reference8 articles.
1. InAs1−xSbx infrared detectors
2. Structural characterization of embedded gallium arsenide on silicon by molecular beam epitaxy
3. Long wavelength infra-red photoconductive InAsSb detectors grown in Si wells by molecular beam epitaxy
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5. Photo-electronic properties of InAs0.07Sb0.93 films
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3. Effects of buffer layer on the structural and electrical properties of InAsSb epilayers grown on GaAs (001);physica status solidi (c);2006-09
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