Correlation of photoluminescence and symmetry studies with photoexcitation and decay processes of infrared active defects in Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332542
Reference14 articles.
1. A Study of the Divacancy in Irradiated Silicon Using Infrared Spectroscopy and Infrared Photoconductivity Measurements
2. An optical study of defects in silicon irradiated with fast neutrons
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature Dependent Investigation on Optically Active Processes of Higher-Order Bands in Irradiated Silicon;Physica Status Solidi (a);1996-04-16
2. Influence of the Position of the Fermi Level on an Infrared Active Defect in Irradiated Silicon;Chinese Physics Letters;1995-05
3. The optically active process of higher-order bands in neutron-irradiated silicon;Journal of Physics: Condensed Matter;1994-10-10
4. Optical active process of higher order bands in fast neutron irradiated silicon;Solid State Communications;1994-08
5. Optical studies of infrared active electronic defects in neutron irradiated silicon after annealing at 450°C;Physica Status Solidi (a);1994-07-16
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