Reduced interface roughness scattering in InGaAs/InAlAs quantum cascade lasers grown on (411)A InP substrates
Author:
Affiliation:
1. Department of Physics, Humboldt University Berlin, Newtonstrasse 15, D-12489 Berlin, Germany
2. Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e. V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
Funder
Deutsche Forschungsgemeinschaft
Horizon 2020 Framework Programme
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5049090
Reference28 articles.
1. Quantum Cascade Laser
2. High-power quantum cascade lasers grown by low-pressure metal organic vapor-phase epitaxy operating in continuous wave above 400K
3. Distributed-Feedback Quantum-Cascade Lasers at 9 $\mu$m Operating in Continuous Wave Up to 423 K
4. Room temperature quantum cascade lasers with 27% wall plug efficiency
5. 5.6 μm quantum cascade lasers based on a two-material active region composition with a room temperature wall-plug efficiency exceeding 28%
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1. Analysis of interface roughness in strained InGaAs/AlInAs quantum cascade laser structures (λ ∼ 4.6 μm) by atom probe tomography;Journal of Crystal Growth;2022-04
2. 5.3 μm-Emitting Diffraction-Limited Leaky-Wave-Coupled Quantum Cascade Laser Phase-Locked Array;IEEE Journal of Selected Topics in Quantum Electronics;2019-11
3. Thermal characteristic of dark resistivity of InGaAs photoconductive semiconductor switches;Journal of Materials Science: Materials in Electronics;2019-07-20
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