On the design and performance of InGaN/Si double-junction photocathodes-Reference-Cited by-同舟云学术

On the design and performance of InGaN/Si double-junction photocathodes

Published:2021-06-14 Issue:24 Volume:118 Page:243906
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Navid Ishtiaque A.¹^ORCID,Vanka Srinivas¹^ORCID,Awni Rasha A.²^ORCID,Xiao Yixin¹^ORCID,Song Zhaoning²^ORCID,Yan Yanfa²^ORCID,Mi Zetian¹^ORCID

Affiliation:

1. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, 1301 Beal Avenue, Ann Arbor, Michigan 48109, USA

2. Department of Physics and Astronomy, and Wright Center for Photovoltaics Innovation and Commercialization (PVIC), University of Toledo, Toledo, Ohio 43606, USA

Funder

U.S. Department of Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0050708

Reference47 articles.

1. Electrochemical Photolysis of Water at a Semiconductor Electrode

2. High efficiency photoelectrochemical water splitting and hydrogen generation using GaN nanowire photoelectrode

3. Black TiO2 nanotube arrays for high-efficiency photoelectrochemical water-splitting

4. Black Si-doped TiO2 nanotube photoanode for high-efficiency photoelectrochemical water splitting

5. Photoelectrochemical Tandem Cells for Solar Water Splitting

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