Origin of the time dependence of wet oxidation of AlGaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124280
Reference16 articles.
1. Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices
2. Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency
3. GaAs MESFET's on a truly insulating buffer layer: demonstration of the GaAs on insulator technology
4. AlxGa1−xAs–GaAs metal–oxide semiconductor field effect transistors formed by lateral water vapor oxidation of AlAs
5. Properties and use of ln0.5(AlxGa1-x)0.5P and AlxGa1-x as native oxides in heterostructure lasers
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1. The law of wet oxidation rate in 850nm VCSELs;Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part I;2015-03-04
2. A study on the law of oxidation rate in GaAs-based VCSELs;Optik;2014-09
3. Lateral Oxidation of AlAs for Circular and Inverted Mesa Saturable Bragg Reflectors;IEEE Journal of Quantum Electronics;2013-09
4. Dependence of the hardness of AlxGa1−xAs on composition and effect of oxidation;Materials Science and Engineering: A;2013-03
5. Oxidation of Al-bearing III-V materials: A review of key progress;Journal of Applied Physics;2013-02-07
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