Theory of thermionic emission from a two-dimensional conductor and its application to a graphene-semiconductor Schottky junction
Author:
Affiliation:
1. Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore 117546
Funder
National Research Foundation Singapore
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5027271
Reference54 articles.
1. Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes
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3. Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
4. Ideal Graphene/Silicon Schottky Junction Diodes
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