Time‐dependent model of an optically triggered GaAs switch
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.355107
Reference8 articles.
1. Electrical and optical properties of high-gain GaAs switches
2. Analysis of time-dependent current transport in an optically controlled Cu-compensated GaAs switch
3. GaAs avalanche photoconductive switches: new technological developtments
4. Lock-on effect in GaAs photoconductive switches
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1. Research on the thermal failure mechanism of an opposed-contact gallium arsenide photoconductive semiconductor switch in avalanche mode;Journal of Physics D: Applied Physics;2022-02-25
2. Ultra-Wideband Microwave Generation Using a Low-Energy-Triggered Bulk Gallium Arsenide Avalanche Semiconductor Switch With Ultrafast Switching;IEEE Transactions on Electron Devices;2018-04
3. Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch;Journal of Applied Physics;2014-03-07
4. Lower Bound of Electrical Field for Maintaining a GaAs Photoconductive Semiconductor Switch in High-Gain Operating Mode;IEEE Transactions on Electron Devices;2013-04
5. EL2 deep level defects and above-band gap two-photon absorption in high gain lateral semi-insulating GaAs photoconductive switch;SPIE Proceedings;2005-01-20
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