Frequency characteristics of the Mn‐doped InPp‐njunction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341094
Reference9 articles.
1. Mn as a p-type dopant in In0.53Ga0.47As on InP substrates
2. An investigation of the deep level photoluminescence spectra of InP(Mn), InP(Fe), and of undoped InP
3. Characterisation of Mn-doped and nominally pure LPE GaxIn1-xAsyP1-y(y=2.1x) between y=0 and y=1 using photoluminescence and electrical measurements
4. Admittance spectroscopy of impurity levels in Schottky barriers
5. Admittance Study of a Single Electron Trap in the LPE InP/InGaAsP Heterostructure Diode
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Properties of InMnP (001) grown by MOVPE;Journal of Crystal Growth;2008-08
2. Study of Schottky diodes made on Mn doped p-type InP;Journal of Materials Science: Materials in Electronics;2007-12-14
3. Curie temperature in InMnP and the mechanism of phase transition;Journal of Magnetism and Magnetic Materials;2007-02
4. Manganese as a fast charge carrier trapping center in InP;Physica B: Condensed Matter;2006-06
5. Chapter 5 Transition Metals in III/V Compounds;Imperfections in III/V Materials;1993
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