First-principles surface energies for monoclinic Ga2O3 and Al2O3 and consequences for cracking of (AlxGa1−x)2O3
Author:
Affiliation:
1. Materials Department, University of California, Santa Barbara, California 93106-5050, USA
2. Department of Physics and Astronomy, University of Kansas, Lawrence, Kansas 66045, USA
Funder
National Science Foundation
Multidisciplinary University Research Initiative
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0019915
Reference39 articles.
1. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3
2. Absorption and Reflection of Vapor Grown Single Crystal Platelets of β-Ga2O3
3. Dipole analysis of the dielectric function of color dispersive materials: Application to monoclinicGa2O3
4. Band-to-band transitions, selection rules, effective mass, and excitonic contributions in monoclinic β−Ga2O3
5. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
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