Dual-wavelength sensitive AlGaN/GaN metal-insulator-semiconductor-insulator-metal ultraviolet sensor with balanced ultraviolet/visible rejection ratios
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4821133
Reference21 articles.
1. Al Ga1−N for solar-blind UV detectors
2. GaN-based Schottky barrier ultraviolet photodetector with a 5-pair AlGaN-GaN intermediate layer
3. High-performance visible-blind GaN-based p-i-n photodetectors
4. Photoresponse study of visible blind GaN/AlGaN p-i-n ultraviolet photodetector
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1. High-Performance β-Ga₂O₃ MISIM Solar-Blind Photodetectors With an Interfacial AlN Layer;IEEE Photonics Technology Letters;2024-05-01
2. High-Performance 8 × 8 4H-SiC-Based MISIM Photodetector Arrays for UV Imaging;IEEE Photonics Technology Letters;2024-02-15
3. Asymmetric Metal–Semiconductor–Metal Al0.24Ga0.76N UV Sensors with Surface Passivation Effect Under Local Joule Heating;JOURNAL OF SENSOR SCIENCE AND TECHNOLOGY;2023-11-30
4. Progress on photovoltaic AlGaN photodiodes for solar-blind ultraviolet photodetection;Chinese Optics Letters;2022
5. A Schottky-Type Metal-Semiconductor-Metal Al0.24Ga0.76N UV Sensor Prepared by Using Selective Annealing;Sensors;2021-06-21
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