Microwave surface resistance in nanostructured high-Tc superconductor films

Author:

Pokusinskyi Anton12ORCID,Kasatkin Alexander34ORCID,Futimsky Serhii3ORCID,Kalenyuk Oleksii23ORCID,Boliasova Olha25ORCID,Shapovalov Andrii23ORCID

Affiliation:

1. Faculty of Radio Physics, Electronics and Computer Systems, Taras Shevchenko National University of Kyiv, Kyiv 03127, Ukraine

2. Superconducting Quantum Electronics Laboratory, Kyiv Academic University, Kyiv 03142, Ukraine

3. G.V. Kurdyumov Institute for Metal Physics of the NAS of Ukraine, Kyiv 03142, Ukraine

4. V. Bakul Institute for Superhard Materials of the NAS of Ukraine, Kyiv 07074, Ukraine

5. Donetsk Institute for Physics and Engineering named after O.O. Galkin of the NAS of Ukraine, Kyiv 03028, Ukraine

Abstract

The impact of artificially created defects nanostructure, formed by implanted dielectric nanoparticles or irradiation defects, on microwave properties of high-Tc superconductor films is analyzed in the framework of phenomenological theory for microwave response of type-II superconductors. We have calculated the surface resistance for such a kind of nanostructured type-II superconductor film and investigated conditions for the emergence of nonlinear response caused by the entrance of microwave-induced vortices in the film's interior through its edges. The obtained results indicate that artificial defect nanostructure in the film's interior formed by point-like or columnar structural defects can significantly improve its microwave characteristics in both the Meissner and mixed states and also increase the threshold for the onset of nonlinear response.

Funder

National Academy of Sciences of Ukraine

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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