X‐ray double crystal characterization of single crystal epitaxial aluminum nitride thin films on sapphire, silicon carbide and silicon substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359158
Reference9 articles.
1. Optical and Electronic Properties of the Nitrides of Indium, Gallium and Aluminium and the Influence of Native Defects
2. III-V nitrides for electronic and optoelectronic applications
3. Prospects for device implementation of wide band gap semiconductors
4. Growth of aluminum nitride thin films on Si(111) and Si(001): Structural characteristics and development of intrinsic stresses
5. High quality aluminum nitride epitaxial layers grown on sapphire substrates
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3. The AlN layer thickness dependent coherent epitaxial growth, stress and hardness in NbN/AlN nanostructured multilayer films;Surface and Coatings Technology;2013-11
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