Origin of high hardness and optoelectronic and thermo-physical properties of boron-rich compounds B6X (X = S, Se): A comprehensive study via DFT approach-Reference-Cited by-同舟云学术

Origin of high hardness and optoelectronic and thermo-physical properties of boron-rich compounds B6X (X = S, Se): A comprehensive study via DFT approach

Published:2021-05-07 Issue:17 Volume:129 Page:175109
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hossain M. M.¹^ORCID,Ali M. A.¹^ORCID,Uddin M. M.¹^ORCID,Islam A. K. M. A.²³^ORCID,Naqib S. H.²^ORCID

Affiliation:

1. Department of Physics, Chittagong University of Engineering and Technology (CUET), Chattogram 4349, Bangladesh

2. Department of Physics, University of Rajshahi, Rajshahi 6205, Bangladesh

3. Department of Electrical and Electronic Engineering, International Islamic University Chittagong, Kumira, Chittagong 4318, Bangladesh

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0047139

Reference86 articles.

1. Closo clusters with unusual electron numbers: molecular orbital considerations and localized bonding schemes

2. Closo clusters with unusual electron numbers: Localized bond schemes for n-atom clusters with n, (n + 1) or (n + 2) skeletal electron pairs

3. Optical phonon modes in rhombohedral boron monosulfide under high pressure

4. Boron: Elementary Challenge for Experimenters and Theoreticians

5. Equation of state of boron subarsenide B12As2 to 47 GPa

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