Magnetotransport properties of spin-valve structures with Mg spacer layers-Reference-Cited by-同舟云学术

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Magnetotransport properties of spin-valve structures with Mg spacer layers

Published:2015-01-19 Issue:3 Volume:106 Page:032412
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Martinez-Boubeta C.¹^ORCID,Ferrante Y.²³,Parkin S. S. P.⁴

Affiliation:

1. Departament d'Electrònica and IN2UB, Universitat de Barcelona, 08028 Barcelona, Spain

2. Technische Universität Kaiserslautern, 67663 Kaiserslautern, Germany

3. Graduate School of Excellence, Materials Science in Mainz, 55128 Mainz, Germany

4. IBM Research Division, Almaden Research Center, San Jose, California 95120, USA

Funder

Gobierno de España

Generalitat de Catalunya (Government of Catalonia)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4906533

Reference34 articles.

1. Magnetically engineered spintronic sensors and memory

2. Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction

3. Spin-dependent tunneling conductance ofFe|MgO|Fesandwiches

4. Large magnetoresistance in Fe/MgO/FeCo(001) epitaxial tunnel junctions on GaAs(001)

5. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

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