Schottky barrier enhancement using reacted Ni2Al3/Ni/n‐GaAs, Ni/Al/Ni/n‐GaAs, and NiAl/Al/Ni/n‐GaAs contacts
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359397
Reference10 articles.
1. Optimum semiconductors for high-power electronics
2. Thermal stability of Mo–Al Schottky metallizations on n-GaAs
3. Molecular-beam epitaxial growth of NiAl on GaAs(001)
4. NiAl/n‐GaAs Schottky diodes: Barrier height enhancement by high‐temperature annealing
5. Schottky enhancement of reacted NiAl/n‐GaAs contacts
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1. Schottky enhancement of contacts to n-GaAs via the exchange mechanism using NiAl[sub x]Ga[sub 1−x] as a metallization;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
2. The formation of ohmic and Schottky enhanced contacts to III–V compound semiconductors via the exchange mechanism: A combined thermodynamic and kinetic model;Journal of Applied Physics;1998-10-15
3. Iridium-based multilayer contacts to n-GaAs;Solid-State Electronics;1998-03
4. Phase equilibria of the Ga–Ni–As ternary system;Journal of Applied Physics;1996-07
5. PtIn2 ohmic contacts to n‐GaAs via an In‐Ga exchange mechanism;Applied Physics Letters;1996-01
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