A magnetoelectric memory device based on pseudo-magnetization

Author:

Shen Tingting12ORCID,Hassan Orchi3ORCID,Dilley Neil R.2ORCID,Datta Supriyo4ORCID,Camsari Kerem Y.5ORCID,Appenzeller Joerg24ORCID

Affiliation:

1. Department of Physics and Astronomy, Purdue University 1 , West Lafayette, Indiana 47907, USA

2. Birck Nanotechnology Center, Purdue University 2 , West Lafayette, Indiana 47907, USA

3. Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology 3 , Dhaka 1000, Bangladesh

4. Elmore Family School of Electrical and Computer Engineering, Purdue University 4 , West Lafayette, Indiana 47907, USA

5. Department of Electrical and Computer Engineering, University of California Santa Barbara 5 , Santa Barbara, California 93106, USA

Abstract

We propose a new type of magnetoelectric memory device that stores magnetic easy-axis information or pseudo-magnetization, rather than a definite magnetization direction, in magnetoelectrically coupled heterostructures. Theoretically, we show how a piezoelectric/ferromagnetic (PE/FM) combination can lead to non-volatility in pseudo-magnetization exhibiting overall ferroelectric-like behavior. The pseudo-magnetization can be manipulated by extremely low voltages especially when the FM is a low-barrier nano-magnet. Using a circuit model benchmarked against experiments, we determine the switching energy, delay, switching probability and retention time of the envisioned 1T/1C memory device in terms of magnetic and circuit parameters and discuss its thermal stability in terms of a key parameter called back-voltage vm which is an electrical measure of the strain-induced magnetic field. Taking advantage of ferromagnetic resonance measurements, we experimentally extract values for vm in CoFeB films and circular nano-magnets deposited on Pb(Mg1/3Nb2/3)0.7Ti0.3O3 which agree well with the theoretical values. Our experimental findings indeed indicate the feasibility of the proposed novel device and confirm the assumed parameters in our modeling effort.

Funder

Semiconductor Research Corporation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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