Giant magnetoresistance effect due to the tunneling between quantum anomalous Hall edge states-Reference-Cited by-同舟云学术

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Giant magnetoresistance effect due to the tunneling between quantum anomalous Hall edge states

Published:2021-05-31 Issue:22 Volume:118 Page:222401
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Xu Yong¹²³^ORCID,Wang Jun⁴,Liu Jun-Feng²^ORCID,Xu Hu³^ORCID

Affiliation:

1. Department of Physics, Harbin Institute of Technology, Harbin 150001, China

2. School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China

3. Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China

4. Department of Physics, Southeast University, Nanjing 210096, China

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0050224

Reference45 articles.

1. Quantum Spin Hall Insulator State in HgTe Quantum Wells

2. The Quantum Spin Hall Effect: Theory and Experiment

3. Nonlocal Transport in the Quantum Spin Hall State

4. Quantized Field-Effect Tunneling between Topological Edge or Interface States

5. Engineering edge-state currents at the interface between narrow ribbons of two-dimensional topological insulators

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1. Field-effect transistor and giant magnetoresistance effect based on optically induced antichiral edge state in graphene;Applied Physics Letters;2024-02-12

2. Magnetotransport Signatures of Superconducting Cooper Pairs Carried by Topological Surface States in Bismuth Selenide;Nano Letters;2023-11-13

3. Analytic expressions for topologically protected edge states in Su–Schrieffer–Heeger model;Solid State Communications;2022-12

4. Strain-induced spin-gapless semiconductors and pure thermal spin-current in magnetic black arsenic-phosphorus monolayers;Physical Chemistry Chemical Physics;2022

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