Punchthrough effects on the electrostatic discharge robustness of ultrathin silicon films on insulator devices-Reference-Cited by-同舟云学术

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Punchthrough effects on the electrostatic discharge robustness of ultrathin silicon films on insulator devices

Published:2006-09-04 Issue:10 Volume:89 Page:103508
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Jam-Wem,Tang Howard

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2345377

Reference13 articles.

1. Proceedings of the 2003 International Symposium on Circuits and Systems;Zencir E.,2003

2. Radio Frequency Integrated Circuits (RFIC) Symposium;Lovelace D.,2003

3. IEEE International SOI Conference;Nigrin S.,2002

4. SOI/bulk hybrid technology on SIMOX wafers for high performance circuits with good ESD immunity

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1. Breakdown voltage of ultrathin dielectric film subject to electrostatic discharge stress;Journal of Applied Physics;2011-09

2. Local Oxidation Fin-Field-Effect-Transistor Structure for Nanodevice Applications;Japanese Journal of Applied Physics;2010-04-20

3. An Investigation of Electrothermal Characteristics on Low-Temperature Polycrystalline-Silicon Thin-Film Transistors;IEEE Transactions on Device and Materials Reliability;2010-03

4. Low-order distributed feedback optofluidic dye laser with reduced threshold;Applied Physics Letters;2009-02-02

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