Silicon‐fluorine bonding and fluorine profiling in SiO2films grown by NF3‐enhanced oxidation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107796
Reference9 articles.
1. Chemically enhanced thermal oxidation of silicon
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5. XPS and SIMS Study of Anhydrous HF and UV/Ozone‐Modified Silicon (100) Surfaces
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1. Direct Si oxidation with fluorine incorporation using an argon excimer VUV source;physica status solidi (a);2005-07
2. Halogens;Computational Microelectronics;2004
3. Behavior and effects of fluorine in annealed n+ polycrystalline silicon layers on silicon wafers;Journal of Applied Physics;2000-05-15
4. Study on F+ ion implantation in SIMOX materials;Physica Status Solidi (a);1996-02-16
5. Polycrystalline silicon thin film transistors fabricated at reduced thermal budgets by utilizing fluorinated gate oxidation;IEEE Transactions on Electron Devices;1996
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