Calculation of carrier and lattice temperatures induced in Si by picosecond laser pulses
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93167
Reference5 articles.
1. Dynamics of dense laser-induced plasmas
2. Auger coefficients for highly doped and highly excited silicon
3. Carrier density dependence of Auger recombination
4. Hot-electron emission from n-silicon
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